bzx84c2v4cc-bzx84c75cc silicon planar zener diodes 1 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. bzx84c2v0cc-bzx84c75cc this series of zener diodes is offered in the convenient, surface mount plastic to-236 package. these devices are desi gned to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and hi gh density pc boards. fe a tures ? zener breakdown voltage range ? 2.4 v to 75 v ? package designed for optimal automated board assembly ? small package size for high density applications absolute maximum ratings (t a = 25 ) parameter symbol value unit power dissipation p d 350 mw thermal resistance, junction to ambient 1) r ? ja 357 /w junction and storage temperature range t j ,t stg - 65 to + 150 1) alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina to-236 plastic package 1. anode 2. anode 3. cathode 1 3 2 a l l d a t a s h e e t
2 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. bzx84c2v4cc-bzx84c75cc bzx84c2v4cc-bzx84c75cc electrical characteristics ( t a = 25 unless otherwise noted, v f < 0.9 v at i f = 10 ma) type marking code zener voltage range 1) dynamic resistance reverse leakage current min. nom. max . i zt (ma) z zt max. ( ? ) i r m a x. (a) at v r (v) bzx84c2v4cc jh 2.2 2.4 2.6 5 100 50 1 bzx84c2v7cc jj 2.5 2.7 2.9 5 100 20 1 bzx84c3v0cc jk 2.8 3 3.2 5 95 10 1 bzx84c3v3cc jm 3.1 3.3 3.5 5 95 5 1 bzx84c3v6cc jn 3.4 3.6 3.8 5 90 5 1 bzx84c3v9cc jp 3.7 3.9 4.1 5 90 3 1 bzx84c4v3cc jr 4 4.3 4.6 5 90 3 1 bzx84c4v7cc jx 4.4 4.7 5 5 80 3 2 bzx84c5v1cc jy 4.8 5.1 5.4 5 60 2 2 bzx84c5v6cc jz 5.2 5.6 6 5 40 1 2 bzx84c6v2cc ka 5.8 6.2 6.6 5 10 3 4 bzx84c6v8cc kb 6.4 6.8 7.2 5 15 2 4 bzx84c7v5cc kc 7 7.5 7.9 5 15 1 5 bzx84c8v2cc kd 7.7 8.2 8.7 5 15 0.7 5 bzx84c9v1cc ke 8.5 9.1 9.6 5 15 0.5 6 bzx84c10cc kf 9.4 10 10.6 5 20 0.2 7 bzx84c11cc kh 10.4 11 11.6 5 20 0.1 8 bzx84c12cc kj 11.4 12 12.7 5 25 0.1 8 bzx84c13cc kk 12.4 13 14.1 5 30 0.1 8 bzx84c15cc km 14.3 15 15.8 5 30 0.05 10.5 BZX84C16CC kn 15.3 16 17.1 5 40 0.05 11.2 bzx84c18cc kp 16.8 18 19.1 5 45 0.05 12.6 bzx84c20cc kr 18.8 20 21.2 5 55 0.05 14 bzx84c22cc kx 20.8 22 23.3 5 55 0.05 15.4 bzx84c24cc ky 22.8 24 25.6 5 70 0.05 16.8 bzx84c27cc kz 25.1 27 28.9 2 80 0.05 18.9 bzx84c30cc ma 28 30 32 2 80 0.05 21 bzx84c33cc mb 31 33 35 2 80 0.05 23.1 bzx84c36cc mc 34 36 38 2 90 0.05 25.2 bzx84c39cc md 37 39 41 2 130 0.05 27.3 bzx84c43cc me 40 43 46 2 150 0.05 30.1 bzx84c47cc mf 44 47 50 2 170 0.05 32.9 bzx84c51cc mh 48 51 54 2 180 0.05 35.7 bzx84c56cc mj 52 56 60 2 200 0.05 39.2 bzx84c62cc mk 58 62 66 2 215 0.05 43.4 bzx84c68cc mm 64 68 72 2 240 0.05 47.6 bzx84c75cc mn 70 75 79 2 255 0.05 52.5 1) tested wi th pulses tp = 20 ms. a l l d a t a s h e e t
3 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. bzx84c2v4cc-bzx84c75cc bzx84c2v4cc-bzx84c75cc t e m p e r a t u r e c o e f f i c i e n t ( m v / c ) -3 3 4 -1 -2 0 1 2 3 4 5 6 7 8 zen er voltage vz (v) 5 67 8 9 10 11 12 temp er ature coefficient t e m p e r a t u r e c o e f f i c i e n t ( m v / c ) 1 nomin a l value vz ( v ) 10 100 temperature co efficien t 10 100 for w ard volta g e v f ( mv ) 120 f o r w a r d c u r r e n t i f ( m a ) 0 500 60 20 40 80 100 180 140 160 200 220 5v1 110 0 700 90 0 27v t y pi cal forward voltage a l l d a t a s h e e t
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